| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an oxide semiconductor light emitting element which is excellent in efficiency of luminescence and uniformity of luminescence and operated by low voltage. <P>SOLUTION: In the ZnO semiconductor light emitting diode element 10, an i-type ZnO light emitting layer 2 and an n-type ZnO layer 3 are laminated in order on a sapphire substrate 1, and an n-type ITO transparent conductive film 4 is formed on the n-type ZnO layer 3. According to laminate structure of the light emitting diode element 10, potential-jump barrier does not impede carrier injection even if bias voltage is applied, so that carriers can be injected with high efficiency into the i-type ZnO light emitting layer 2. Since a pn interface is formed not by hetero-junction with different kind semiconductor material like the conventional case but by homojunction with ZnO based semiconductor of the i-type ZnO light emitting layer 2 and the n-type ZnO layer 3, hole injection efficiency is high. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
