SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a pad structure in which crack resistance is enhanced against an impact being applied directly under a pad by wire bonding in semiconductor assembling process and further enhanced against an ultrasonic wave being oscillated at the time of wire bonding. SOLUTION: A lower layer metal 3 and an uppermost layer metal 7 are connected through a via 5 and a slit 11 is made in the lower layer metal 3 while inclining by 45°from the amplitude direction of an ultrasonic wave. An external terminal 9 is provided on the uppermost layer metal 7. Copper is employed as the conductive material of the lower layer metal 3 and the uppermost layer metal 7 and aluminium is employed as the conductive material of the external terminal 9. COPYRIGHT: (C)2005,JPO&NCIPI