| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a light emitting element in a way such that a process of forming a low-temperature buffer layer before a GaInN forming process is omitted and only a high-temperature film forming process is carried out. SOLUTION: A sapphire substrate is overlaid with a high-temperature buffer layer and a silicon nitride buffer body are formed to greatly improve characteristics of a light emitting element formed of GaInN, and energy cost is reduced to prolong the life of a device. COPYRIGHT: (C)2005,JPO&NCIPI
|
