| 摘要 |
PROBLEM TO BE SOLVED: To realize simultaneously shallow junction and activation of a diffusion layer in a transistor for LOP use etc. in which a gate length is short and the shallow junction is necessary. SOLUTION: In the method for manufacturing a semiconductor device, first a gate insulating film and a gate electrode are formed on a substrate, second the gate electrode is used as a mask and Ge ion or Si ion is implanted in order to make the substrate surface amorphous, and after that, the gate electrode is used as a mask, and impurities of B ions or the like for forming a diffusion layer are implanted in a part where the substrate is made amorphous. Further, the diffusion layer is irradiated with the visible light for a short time. COPYRIGHT: (C)2005,JPO&NCIPI
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