| 摘要 |
PROBLEM TO BE SOLVED: To provide a MOS transistor that is also improved in high-frequency characteristics by suppressing the overlapping amount of a source/drain region and a gate electrode. SOLUTION: After first masks 4 are formed on the side faces of gate electrodes 3, a drain region 6 and source regions 7 are formed in a semiconductor substrate 1 by using the first masks 4 as masks. Then the impurity concentrations in the source regions 7 are raised by only doping an impurity to the source regions 7 by masking the drain region 6. Successively, third masks 10 are formed on the side faces of the first masks 4, and an impurity is doped to the drain region 6 and source regions 7 by using the third masks 10 as masks. Then the doped impurity is diffused by performing heat treatment on the semiconductor substrate 1. COPYRIGHT: (C)2005,JPO&NCIPI
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