| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which fluorides being produced when oxides on the metal surface are removed after forming a contact hole can be removed and production of TiOH can be prevented, and to provide a process for fabricating a semiconductor device. SOLUTION: The system for fabricating an electronic device comprises a processing chamber employing a fluorine based gas for removing an insulating film between interconnect line layers and oxides on the contact surface of a semiconductor, a conveyor for conveying the semiconductor in order to remove fluorine remaining on the contact surface after the insulating film is removed, equipment for heat treating the semiconductor, and a system performing hydrogen based plasma processing of the semiconductor. COPYRIGHT: (C)2005,JPO&NCIPI
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