| 摘要 |
A hole which is to be a part of an interconnection (wiring) hole (21) is formed penetrating through a second insulating layer (13) and a third insulating layer (14) made of porous silicon oxide film, by etching. Further, a second groove (23) is formed on the third insulating layer (14) using a second stopper film (20), by etching. Further, direct nitriding of a silicon oxide film applying an RLSA plasma processing deice is carried out on the side wall of the interconnection hole (21) and the second groove (23), and a barrier layer (25) made of SiN film is formed. Here, the second stopper film (20) and the barrier layer (25) are formed by the same direct nitriding.
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