| 摘要 |
PURPOSE: A method for fabricating a capacitor of a semiconductor device is provided to grow a uniform MPS(meta-stable polysilicon) grain and increase capacitance by controlling the carbons out-diffused from an oxide layer for forming the height of a capacitor while using a capping nitride layer. CONSTITUTION: A contact plug(33) is formed in an interlayer dielectric(31) formed on a semiconductor substrate(21). A TEOS(tetraethoxysilane) thin film is formed on the interlayer dielectric including the contact plug. A capping nitride layer and a hard mask are stacked on the TEOS thin film. The hard mask and the capping nitride layer are sequentially eliminated. The TEOS thin film is removed by using the hard mask to form a storage node contact hole(41) exposing the upper surface of the contact plug. After the remaining hard mask is removed, a polysilicon layer is formed on the capping nitride layer including the storage node contact hole. The polysilicon layer is selectively removed until the upper surface of the capping nitride layer is exposed. MPS grains(47) are grown on the surface of the polysilicon layer to form a storage node electrode(49). A dielectric layer and an upper electrode are formed on the storage node electrode.
|
