发明名称 METHOD FOR FORMING CONDUCTIVE LAYER PATTERN WITH COBALT BARRIER LAYER TO PREVENT BRIDGE BETWEEN PATTERNS
摘要 PURPOSE: A method for forming a conductive layer pattern with a cobalt barrier layer is provided to prevent a bridge between patterns by effectively eliminating residual cobalt when a cobalt layer is introduced as a barrier layer. CONSTITUTION: A contact hole is formed in an interlayer dielectric. A cobalt layer(300) extends from the bottom of the contact hole to a part on the interlayer dielectric. A conductive layer is formed on the cobalt layer, filling the contact hole and extending to a part on the interlayer dielectric. A protection capping layer(600) is formed on the conductive layer. The protection capping layer and the conductive layer are patterned. The residual cobalt layer exposed by the patterned conductive layer is selectively eliminated by a sputter etch process or an RF plasma etch process.
申请公布号 KR20050001221(A) 申请公布日期 2005.01.06
申请号 KR20030042796 申请日期 2003.06.27
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI, GIL HEYUN;KANG, SANG BOM;KIM, HYUN SU;MOON, KWANG JIN;SHON, WOONG HEE
分类号 H01L21/28;(IPC1-7):H01L21/28 主分类号 H01L21/28
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