METHOD FOR FABRICATING SEMICONDUCTOR DEVICE TO PREVENT FABRICATING COST AND NUMBER OF FABRICATING PROCESSES FROM INCREASING

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to prevent fabricating cost and the number of fabricating processes from increasing by eliminating the necessity of an additional hydrogen plasma treatment. CONSTITUTION: A silicon substrate(1) including a predetermined underlying structure is prepared. An interlayer dielectric(3) is formed on the front surface of the substrate. An etch mask for exposing a contact region is formed on the interlayer dielectric. The interlayer dielectric exposed by using the etch mask is etched to form a contact hole. Hydrogen plasma is generated in the same equipment through an in-situ process to eliminate C-F-O based polymer generated on the surface in an etch process. The etch mask is eliminated.