| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to enhance the capacitance by using a metal nitride film as an upper and lower electrodes and a metal oxide film as a dielectric film. CONSTITUTION: A lower electrode(15) is formed on a semiconductor substrate(10) having a plug(12). A dielectric film(16) is formed on the lower electrode. An upper electrode(17) is formed on the dielectric film. At the time, the plug, the lower electrode and the upper electrode are composed of a metal nitride film(MN), and the dielectric film is composed of a metal oxide film(M2O5). The metal(M) is composed of V-group atom.
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