SEMICONDUCTOR DEVICE WITH VOID-FREE INTERLAYER DIELECTRIC AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to suppress voids during a gap-filling process by enlarging a space between gate electrodes using a spacer removing process. CONSTITUTION: A plurality of gate electrodes(12) are formed on a substrate with a predetermined structure. A nitride layer(13) and an oxide layer(14) are sequentially deposited thereon. A spacer is formed at both sidewalls of each gate electrode by etching selectively the oxide layer. A source and drain region are formed in the substrate by implanting ions into the resultant structure using the gate electrode and spacer as a mask. The spacer is removed therefrom and an interlayer dielectric is formed thereon.