发明名称 |
VAPOR PHASE GROWTH METHOD FOR Al-CONTAINING III-V GROUP COMPOUND SEMICONDUCTOR, AND METHOD AND DEVICE FOR PRODUCING Al-CONTAINING III-V GROUP COMPOUND SEMICONDUCTOR |
摘要 |
A method for growing a crystal of an Al-containing III-V group compound semiconductor by the conventional HVPE method, characterized in that it comprises a step of reacting Al with hydrogen halide at a temperature of 700° C. or lower to form a halide of Al. The method has allowed the suppression of the formation of aluminum chloride (AlCl) or aluminum bromide (AlBr) reacting violently with quartz, which is the material of a reaction vessel for the growth, resulting in the achievement of the vapor phase growth of an Al-containing III-V group compound semiconductor at a rate of 100 microns/hr or more, which has lead to the mass-production of a substrate and a semiconductor element having satisfactory resistance to adverse environment. |
申请公布号 |
EP1494269(A1) |
申请公布日期 |
2005.01.05 |
申请号 |
EP20030745948 |
申请日期 |
2003.04.07 |
申请人 |
TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY TLO CO., LTD. |
发明人 |
KOUKITSU, AKINORI;KUMAGAI, YOSHINAO;MARUI, TOMOHIRO |
分类号 |
C23C16/34;C23C16/30;C30B25/02;C30B25/14;H01L21/205 |
主分类号 |
C23C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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