Semiconducting component has field stop zone before emitter in direction towards base zone and designed to allow defined penetration of electric field to emitter

摘要

The device has a field stop zone (14) formed before an emitter (13) in the direction towards a base zone (11). The field stop zone is designed so that it allows defined penetration of the electric field to the emitter. The field stop zone is formed homogeneously and its doping dose per unit area is smaller than a difference of the breakdown charge and the doping present in the lowly doped base zone.