发明名称 SILICON CARBIDE BASED POROUS MATERIAL AND METHOD FOR PRODUCTION THEREOF
摘要 <p>A silicon carbide-based porous material characterized by comprising silicon carbide particles as an aggregate, metallic silicon and an oxide phase containing Si, Al and an alkaline earth metal; it is high in porosity and strength and superior in oxidation resistance and thermal shock resistance and, when used as a filter, is very low in risk of having defects such as cuts (which cause leakage of fluid) and the like, as well as in pressure loss.</p>
申请公布号 EP1493722(A1) 申请公布日期 2005.01.05
申请号 EP20030715654 申请日期 2003.03.31
申请人 NGK INSULATORS, LTD. 发明人 TABUCHI, YUUICHIROU;FURUKAWA, MASAHIRO;MORIMOTO, KENJI;KAWASAKI, SHINJI
分类号 C04B35/565;B01D39/20;B01D46/24;B01D53/94;B01J35/04;C04B38/06;C04B38/08;F01N3/022;F01N3/28;(IPC1-7):C04B35/565 主分类号 C04B35/565
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