Process of protecting an element of an integrated circuit against silicide formation

摘要

Protection of a semiconductor material against the formation of a metal silicide comprises the formation, on the material, of a layer of silicon-germanium alloy using the following stages: (a) deposition of the layer of silicon-germanium alloy (10) on the integrated circuit assembly; (b) removal of this layer in the zones needed for the formation of a silicide; (c) deposition of a metal on the structure obtained by the removal; (d) formation of the metal silicide (110) on the defined zones; (e) removal of the metal which has not reacted and of the ternary metal-silicon-germanium alloy possibly formed; (f) removal of the layer of silicon-germanium alloy in order to expose the non silicide component.