Method and corresponding circuit structure to correlate the transconductance of transistors of different type

摘要

The invention relates to a method and related circuit structure (10) to correlate the transconductance value of transistors of different type, for example MOS transistors and bipolar transistors. The structure (10) comprises a first differential cell (3) formed by transistors (T1a, T1b) of the first type and a second differential cell (4) formed by transistors (T2a, T2b) of the second type connected to each other by means of a circuit portion (6) responsible for calculating an error signal (Δε) obtained as difference between the cell differential currents and applied to said first differential cell (3) and to an output node (O) of the same circuit structure (10) obtaining a transconductance correlation independent from process tolerances and temperature.