发明名称 |
SiC Semiconductor device and method for fabricating the same |
摘要 |
<p>Ion implantation is carried out to form a p-well region and a source region in parts of a high resistance SiC layer on a SiC substrate, and a carbon film is deposited over the substrate. With the carbon film deposited over the substrate, annealing for activating the implanted dopant ions is performed, and then the carbon film is removed. Thus, a smooth surface having hardly any surface roughness caused by the annealing is obtained. Furthermore, if a channel layer is epitaxially grown, the surface roughness of the channel layer is smaller than that of the underlying layer. Since the channel layer having a smooth surface is provided, it is possible to obtain a MISFET with a high current drive capability.</p> |
申请公布号 |
EP1494268(A2) |
申请公布日期 |
2005.01.05 |
申请号 |
EP20040015637 |
申请日期 |
2004.07.02 |
申请人 |
PANASONIC CORPORATION |
发明人 |
KUSUMOTO, OSAMU;KITABATAKE, MAKOTO;UCHIDA, MASAO;TAKAHASHI, KUNIMASA;YAMASHITA, KENYA;HAGIO, MASAHIRO;SAWADA, KAZUYUKI |
分类号 |
H01L21/04;H01L29/10;H01L29/15;H01L29/24;H01L29/36;H01L29/78;H01L29/812;(IPC1-7):H01L21/04 |
主分类号 |
H01L21/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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