发明名称 |
Method of fabricating silicon-based MEMS devices |
摘要 |
<p>A method of fabricating a silicon-based microstructure is disclosed, which involves depositing electrically conductive amorphous silicon doped with first and second dopants to produce a structure having a residual mechanical stress of less than +/= 100Mpa. The dopants can either be deposited in successive layers to produce a laminated structure with a residual mechanical stress of less than +/= 100Mpa or simultaneously to produce a laminated structure having a mechanical stress of less than +/= 100Mpa.</p> |
申请公布号 |
EP1493712(A2) |
申请公布日期 |
2005.01.05 |
申请号 |
EP20040102666 |
申请日期 |
2004.06.11 |
申请人 |
DALSA SEMICONDUCTOR INC. |
发明人 |
OUELLET, LUC;ANTAKI, ROBERT |
分类号 |
B81B3/00;B81C1/00;H01L21/00;(IPC1-7):B81B3/00 |
主分类号 |
B81B3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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