Process for the obtainment of a semiconductor device comprising a suspended micro-system and corresponding device

摘要

The present invention refers to a process for the obtainment of a semiconductor comprising a suspended micro-system, to a device so obtained and its applications.

In one embodiment the process for the obtainment of a semiconductor device comprising a suspended micro-system comprises the phases of: forming a silicon substrate (10); forming a silicon porous layer (11) above said substrate (10); oxidizing said porous layer (12); depositing on the whole device an oxide layer (13); depositing above said oxide layer (13) a first polysilicon layer (14); removing selectively said first polysilicon layer (14), said oxide layer (13) and said porous layer (12); depositing on the whole device a nitride layer (16); depositing on the whole device a second polysilicon layer (17); removing selectively said second polysilicon layer (17), said nitride layer (16), said first polysilicon layer (14), and said oxide layer (13); removing said porous layer (12) in the areas made accessible by the preceding phase.