| 摘要 |
A new method of provided for the creation of a rim-type phase-shift mask. Layers of phase shifter material, chrome and an etch resist mask having an opening having a first width are created. The layer of chrome is etched, the etch resist mask is removed. The layer of MoSiON is isotropically etched using the patterned and etched layer of chrome as a mask, partially removing the layer of MoSiON from under the chrome mask. A second layer of etch resist is deposited over the surface of the chrome mask, into the opening created through the layer of chrome and further over the surface of the rim of the mask. The second etch resist layer is exposed and developed, whereby the patterned and etched layer of chrome serves as a mask, thereby shielding from exposure and therefore leaving in place the second layer of etch resist where this second layer of photoresist overlies the rim of the phase shift mask. The remaining second layer of photoresist forms a protective layer for the layer of MoSiON. The quartz substrate is etched in accordance with the first width of the opening created through the second layer of etch resist, the second layer of etch resist is removed from above the rim surface areas of the phase shift mask. The patterned and etched layer of chrome is removed.
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