发明名称 Semiconductor memory device
摘要 A semiconductor memory device comprises memory banks each including a memory cell array and a control circuit for the memory cell array and an interface circuit shared by the plural memory banks. The semiconductor memory device is adapted for performing reading of data from the plural memory banks and rewriting of data to the memory banks. In an operation mode for performing the reading, processings A1 to A4 are performed. In an operation mode for performing the rewriting, processings B1 to B3 are performed.
申请公布号 US6839261(B2) 申请公布日期 2005.01.04
申请号 US20030648376 申请日期 2003.08.27
申请人 OKI ELECTRIC INDUSTRY CO., LTD. 发明人 HIGUCHI TSUTOMU
分类号 G01R31/28;G06F12/00;G06F12/06;G11C7/10;G11C16/02;G11C16/10;G11C16/26;G11C16/32;G11C29/56;(IPC1-7):G11C5/02;G11C5/06;G11C8/00 主分类号 G01R31/28
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