发明名称 Fabrication of high resistivity structures using focused ion beams
摘要 The present invention provides a method for creating microscopic high resistivity structures on a target by directing a focused ion beam toward an impact point on the target and directing a precursor gas toward the impact point, the ion beam causing the precursor gas to decompose and thereby deposit a structure exhibiting high resistivity onto the target. The precursor gas preferably contains a first compound that would form a conductive layer and a second compound that would form an insulating layer if each of the first and second compounds were applied alone in the presence of the ion beam.
申请公布号 US6838380(B2) 申请公布日期 2005.01.04
申请号 US20020055320 申请日期 2002.01.23
申请人 FEI COMPANY 发明人 BASSOM NEIL J.;MAI TUNG
分类号 C23C16/48;C23C16/04;H01L21/02;H01L21/285;(IPC1-7):H01L21/44 主分类号 C23C16/48
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