发明名称 Semiconductor device comprising ESD protection circuit for protecting circuit from being destructed by electrostatic discharge
摘要 The semiconductor device includes an input/output circuit, a functional module, an electrostatic discharge protection circuit and bumps. The input/output circuit is formed close to an edge of the semiconductor chip. The functional module is formed on the semiconductor chip located on a central side with regard to the input/output circuit. The electrostatic discharge protection circuit is formed in the functional module of the semiconductor chip and serves to protect a circuit located in a downstream thereof, from being destructed by electrostatic discharge. The bumps are arranged on one of major surfaces of the semiconductor chip located close to the functional module, and they are connected to the functional module via the electrostatic discharge protection circuit.
申请公布号 US6838775(B2) 申请公布日期 2005.01.04
申请号 US20030693132 申请日期 2003.10.23
申请人 发明人
分类号 H01L27/04;H01L21/822;H01L23/498;H01L23/60;H01L23/62;H01L23/64;H05K1/02;H05K1/18;H05K3/46;(IPC1-7):H01L23/34 主分类号 H01L27/04
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