发明名称 Power MOS arrays with non-uniform polygate length
摘要 In a MOS array, current loss at distances further away from the drain and source contacts is compensated for by adjusting the length of the polygate. In an array with drain and source contacts near the middle of the structure, the length of the polygate tapers off along the width of the polygate towards both ends of the polygate.
申请公布号 US6838711(B1) 申请公布日期 2005.01.04
申请号 US20030658432 申请日期 2003.09.08
申请人 NATIONAL SEMICONDUCTOR CORPORATION 发明人 HOPPER PETER J.;LINDORFER PHILIPP;VASHCHENKO VLUDISLAV;DRURY ROB
分类号 H01L29/06;H01L29/423;H01L29/78;(IPC1-7):H01L27/10 主分类号 H01L29/06
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