发明名称 |
Plasma processing apparatus |
摘要 |
A plasma processing apparatus provided with a holding stage of a system in which a temperature of an electrode block is controlled so as to control the temperature of a semiconductor wafer. The electrode block is provided with at least first and second independent temperature controllers on inner and outer sides thereof, and a slit for suppressing heat transfer is provided in the electrode block between the first and second temperature controllers.
|
申请公布号 |
US6838833(B2) |
申请公布日期 |
2005.01.04 |
申请号 |
US20030670288 |
申请日期 |
2003.09.26 |
申请人 |
HITACHI, LTD.;HITACHI HIGH-TECHNOLOGIES CORPORATION |
发明人 |
ARAI MASATSUGU;UDO RYUJIRO;TAMURA NAOYUKI;KADOTANI MASANORI;YOSHIGAI MOTOHIKO |
分类号 |
H01J37/32;H01L21/00;H01L21/683;(IPC1-7):H01J7/24 |
主分类号 |
H01J37/32 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|