发明名称 Plasma processing apparatus
摘要 A plasma processing apparatus provided with a holding stage of a system in which a temperature of an electrode block is controlled so as to control the temperature of a semiconductor wafer. The electrode block is provided with at least first and second independent temperature controllers on inner and outer sides thereof, and a slit for suppressing heat transfer is provided in the electrode block between the first and second temperature controllers.
申请公布号 US6838833(B2) 申请公布日期 2005.01.04
申请号 US20030670288 申请日期 2003.09.26
申请人 HITACHI, LTD.;HITACHI HIGH-TECHNOLOGIES CORPORATION 发明人 ARAI MASATSUGU;UDO RYUJIRO;TAMURA NAOYUKI;KADOTANI MASANORI;YOSHIGAI MOTOHIKO
分类号 H01J37/32;H01L21/00;H01L21/683;(IPC1-7):H01J7/24 主分类号 H01J37/32
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