System and method for wafer-based controlled patterning of features with critical dimensions

摘要

In a system and a method for controlling critical dimensions of features to be formed on a substrate, a measurement device is coupled to an etch tool to form a feedback loop to control the critical dimensions on a wafer basis instead of a lot basis. In a further embodiment, the etch tool is in communication with a control unit that allows controlling of the etch tool and/or of the photolithography tool on the basis of an etch model. Thus, variations within a lot may be compensated by a software implementation of the etch model. The control unit may be implemented in the etch tool or an external device.