| 摘要 |
PURPOSE: Semiconductor etching equipment is provided to easily fabricate a nozzle part by simplify the structure of the nozzle part, and to prevent an insulation member from being damaged by plasma by inducing a flow of helium gas and plasma while using an insulation pipe. CONSTITUTION: A reaction chamber is prepared. A lower electrode to which RF(radio frequency) power is coupled is installed in the reaction chamber. An electrostatic chuck is mounted on the upper surface of the lower electrode. An insulation member(6) is installed in a nozzle part(5) prepared at the lower electrode. The nozzle part is formed of a cylindrical pipe. The first and second flanges(51,52) are formed on the upper and lower portions of the nozzle part. One and the other ends of an insulation pipe(61) are connected to the first and second flanges, respectively. The insulation member is composed of the insulation pipe.
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