| 摘要 |
<p>In a solid state imaging apparatus, photoelectric conversion (PD) sections (1, 2, 3 and 4) are arranged in the row direction and PD sections (5, 6, 7 and 8) are arranged so as to be adjacent to the PD sections (1, 2, 3 and 4), respectively. A transfer transistor (13) in the first row and a transfer transistor (14) in the second row are connected to a first READ line (32) and respective gates of a transfer transistor (17) in the firs row and a transfer transistor (18) are connected to a second READ line (33). Charges from the PD sections (2, 3, 6 and 7) in the second and third rows are accumulated in a second FD section (10). <IMAGE></p> |
