| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to control diffusion of boron during a heat treatment process for forming silicide and prevent contact resistance from increasing by performing the heat treatment process in a mixture gas atmosphere of nitrogen, nitrogen fluoride and hydrogen. CONSTITUTION: A transistor(10) including a gate electrode(3) and a source/drain region(5) is formed on a semiconductor substrate(1). An interlayer dielectric is formed to cover the transistor. The interlayer dielectric is etched to form a contact hole(13) exposing the source/drain region. A barrier layer(14) is formed on the sidewall of the contact hole, the exposed source/drain region and the interlayer dielectric. A heat treatment process is performed on the resultant structure to form silicide on the interface between the barrier layer and the source/drain region. A metal layer(16) for a plug is deposited on the interlayer dielectric including the contact hole. A rapid thermal process for forming the silicide is performed in a mixed gas atmosphere of N2, NF3 and H2.
|
