METHOD FOR MANUFACTURING MOSFET CAPABLE OF DECREASING THE NUMBER OF MASKS USING SACRIFICIAL SPACERS INSTEAD OF MASK

摘要

PURPOSE: A method for manufacturing a MOSFET with an LDD(Lightly Doped Drain) structure is provided to decrease the number of masks by using a sacrificial spacer instead of a mask pattern. CONSTITUTION: A gate oxide layer(22) and a gate stack are sequentially formed on a silicon substrate(21) defined with a first and second regions. A first photoresist mask is formed to expose the first region. A first LDD region(28) is formed in the exposed first region. A first sacrificial spacer(31) is formed at both sidewalls of the gate stack in the first region. A first source/drain region(32) is formed in the first region. The first photoresist mask is removed. A second LDD region(34) is formed in the second region by using a second photoresist mask for exposing the second region. A second sacrificial spacer(36) is formed at both sidewalls of the gate stack in the second region. A second source/drain region is then formed in the second region.