METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE TO REDUCE CONTACT RESISTANCE BY DECOUPLING FINE OXIDE LAYER AT CONTACT INTERFACE USING ION-IMPLANTATION

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to reduce contact resistance by decoupling a fine oxide layer at contact interface using ion-implantation processing. CONSTITUTION: Gates(3) are formed on a semiconductor substrate(1) having an isolation layer(2). A spacer(4) is formed at both sidewalls of the gate. Ion-implantation processes for forming a source/drain and a junction are sequentially performed. An interlayer dielectric(5) is formed on the resultant structure to cover the gates. Contact holes are formed to expose the substrate between the gates by selectively etching the interlayer dielectric. Pretreatment is performed to remove particles on the exposed substrate. A landing plug(7) is formed by filling a contact-silicon layer into the contact holes. For decoupling a fine oxide layer generated at interface between the junction and the contact-silicon, phosphors are implanted into the resultant structure.