MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICES HAVING PLANARIZED POLYCRYSTALLINE SILICON LAYER

摘要

PURPOSE: A manufacturing method for semiconductor devices is provided to prevent a falling of a gate electrode by planarizing a curved portion of a polycrystalline silicon layer generated by a trench. CONSTITUTION: A trench is formed on a gate region on a surface of a substrate(21). A gate oxide layer(29) is formed on a front portion of the substrate having the trench. A polycrystalline silicon layer(31) having dopants therein is formed on a front portion of the substrate having the gate oxide layer. The polycrystalline silicon layer is planarized. A metallic silicide layer(33) and an upper insulating layer(35) for a gate are sequentially formed on the polycrystalline silicon layer. A photoresist pattern is formed on the upper insulating layer to form an isle-shape gate electrode(37) such that a surface of a source/drain region is exposed.