MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE HAVING REDUCED DEFECTS DUE TO ERRONEOUS CRYSTALLIZATIONS

摘要

PURPOSE: A manufacturing method of a semiconductor device is provided to prevent a crystalline defect at an interface between an inner wall of a trench and a substrate by dissipating a contracting force at a peripheral of the interface. CONSTITUTION: A gate insulating film(20) is formed on a semiconductor substrate(10). A gate electrode(30) is formed on the gate insulating film such that the gate electrode is electrically insulated from the semiconductor substrate. The gate electrode, the gate insulting film, and the semiconductor substrate are etched to form a trench(60) which is used to electrically isolate a device region for forming a device from a remainder region on the substrate top surface. An inner portion of the trench is etched using a gas containing Cl2 or HBr.