发明名称 MULTI-PART ELECTRODE FOR A SEMICONDUCTOR PROCESSING PLASMA REACTOR AND METHOD OF REPLACING A PORTION OF A MUTLI-PART ELECTRODE
摘要 An improved upper electrode system has a multi-part electrode in which a central portion of the electrode having high wear is replaceable independent of an outer peripheral portion of the electrode. The upper electrode can be used in plasma processing systems for processing semiconductor substrates, such as by etching or CVD. The multi-part upper electrode system is particularly useful for large size wafer processing chambers, such as 300 mm wafer processing chambers for which monolithic electrodes are unavailable or costly.
申请公布号 KR20040111691(A) 申请公布日期 2004.12.31
申请号 KR20047018952 申请日期 2003.05.23
申请人 发明人
分类号 H01L21/3065;H05H1/46;C23C16/509;C25B11/00;H01J37/32 主分类号 H01L21/3065
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