| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to remove effectively fine convex-type defects on a TEOS oxide layer by in-situ sputtering after depositing the TEOS oxide layer. CONSTITUTION: A TEOS oxide layer(32) as an insulating layer is deposited on a semiconductor substrate(31) by CVD(Chemical Vapor Deposition). At this time, fine convex-type defects(33) are generated on the TEOS oxide layer. By using in-situ sputtering, the fine convex-type defects are effectively removed. The sputtering gas is one selected from a group consisting of O2, N2 and Ar.
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