发明名称 CLEANING METHOD FOR CHEMICAL VAPOR DEPOSITION APPARATUS USING TWO GAS DIFFUSERS
摘要 PURPOSE: A cleaning method for a chemical vapor deposition apparatus is provided to suppress the generation of particles during gas introduction by installing two gas injection portions for a first gas and a second gas/ a cleaning gas, respectively. CONSTITUTION: A first gas containing a silicon and a second gas reacting with the first gas are supplied to a chamber(110) through a first gas injector(130) and a second gas injector(140) which operate independently from each other. The first gas and the second gas are activated to be vaporized to a surface mounted on a susceptor(160) implemented in the chamber. A cleaning gas is supplied to inside the chamber through the second gas injector. The cleaning gas is activated to react with residual first and second gases to remove the residual gases from the chamber.
申请公布号 KR20040110860(A) 申请公布日期 2004.12.31
申请号 KR20030040339 申请日期 2003.06.20
申请人 JUSUNG ENGINEERING CO., LTD. 发明人 HAN, JEONG HUN;LEE, YONG HYEON;YOO, JIN HYEOK
分类号 H01L21/205;(IPC1-7):H01L21/205 主分类号 H01L21/205
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