SELF-ALIGNED METHOD OF FORMING AN ETCH STOPPER IN A PROCESS OF MANUFACTURING AN LCD USING A PROTRUSION PATTERN AT THE EDGE OF A GATE ELECTRODE

摘要

PURPOSE: A self-aligned method of forming an etch stopper in a process of manufacturing an LCD(Liquid Crystal Display) is provided to dispense with a separate apparatus and a separate process for back exposure, thereby simplifying the manufacturing process by using a protrusion pattern at the edge of a gate electrode. CONSTITUTION: A gate material layer is formed on a transparent insulating substrate(31). A gate electrode(33) having a protrusion pattern(33a) is formed by selectively etching the gate material layer. A gate insulating layer(35) and an amorphous silicon layer are formed on the resultant substrate successively. A photoresist pattern is formed on the amorphous silicon layer by coating, exposing through a reticle(41) and developing a photoresist layer(39). In case of front exposure of the photoresist layer, the photoresist pattern is formed in a self-aligned method by the light scattered and reflected on the protrusion pattern of the gate electrode. The photoresist pattern is used as an etch stopper.