发明名称 |
METHOD OF SELECTIVE ELECTROCHEMICAL ETCHING FOR ANALYZING TWO DIMENSIONAL DOPANT DISTRIBUTION OF SLICE TO BE TESTED HAVING ALUMINIUM LAYER AT BOTTOM PORTION THEREOF |
摘要 |
PURPOSE: A method of selective electrochemical etching for analyzing a two dimensional dopant distribution is provided to improve reproductivity of the doping distribution by providing a hole current from an Al contact layer at a bottom portion of a slice to be tested. CONSTITUTION: A bath contains facing electrodes and an etchant. A sample to be tested(100) includes at least one doping region and is electrically biased on a surface of the bath. A bias voltage is applied to a bottom of the sample to be tested facing a side of the doping region such that a hole current is supplied from the bottom portion of the sample to be tested.
|
申请公布号 |
KR20040110163(A) |
申请公布日期 |
2004.12.31 |
申请号 |
KR20030039352 |
申请日期 |
2003.06.18 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI, CHEOL JONG |
分类号 |
H01L21/66;B23H3/00;C25F3/00;C25F3/12;C25F3/14;C25F7/00;H01L21/302;H01L21/306;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/66 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|