发明名称 METHOD OF SELECTIVE ELECTROCHEMICAL ETCHING FOR ANALYZING TWO DIMENSIONAL DOPANT DISTRIBUTION OF SLICE TO BE TESTED HAVING ALUMINIUM LAYER AT BOTTOM PORTION THEREOF
摘要 PURPOSE: A method of selective electrochemical etching for analyzing a two dimensional dopant distribution is provided to improve reproductivity of the doping distribution by providing a hole current from an Al contact layer at a bottom portion of a slice to be tested. CONSTITUTION: A bath contains facing electrodes and an etchant. A sample to be tested(100) includes at least one doping region and is electrically biased on a surface of the bath. A bias voltage is applied to a bottom of the sample to be tested facing a side of the doping region such that a hole current is supplied from the bottom portion of the sample to be tested.
申请公布号 KR20040110163(A) 申请公布日期 2004.12.31
申请号 KR20030039352 申请日期 2003.06.18
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI, CHEOL JONG
分类号 H01L21/66;B23H3/00;C25F3/00;C25F3/12;C25F3/14;C25F7/00;H01L21/302;H01L21/306;(IPC1-7):H01L21/302 主分类号 H01L21/66
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