BIPOLAR JUNCTION TRANSISTOR AND ITS FABRICATING METHOD TO PREVENT DEGRADATION OF DEVICE BY USING EMITTER REGION AND EMITTER ELECTRODE WITH SAME CRYSTAL STRUCTURE

摘要

PURPOSE: A bipolar junction transistor and its fabricating method are provided to prevent degradation of a device by using an emitter region and an emitter electrode with the same crystal structure. CONSTITUTION: A base region(138) of a second conductive type is formed on a first collector region(104). A first conductive emitter region(116) is formed in the base region. An emitter electrode pattern(118) is formed to contact directly the emitter region. At the time, the emitter region and the emitter electrode pattern have the same crystal structure such as a single crystalline structure.