| 摘要 |
PURPOSE: A semiconductor memory device having a compensating circuit for leakage current and a data reading method thereof are provided to reduce the process deviation effect by minimizing the number of transistors which are operating in a data read mode, and sense amplifying the result of comparison between a bit cell data of an asymmetric sense amplifier on a real ground basis and a reference signal reflected in the effect of precharge voltage coupling and off current. CONSTITUTION: A semiconductor memory device having a compensating circuit for leakage current comprises a precharge unit(200), a dummy word line unit(210). In the device, a dummy word line unit(210) discharges the plural discharging lines and the plural enable lines to the first logic state when a dummy word line signal is activated from the first logic stage to the second logic state by on-state MOSFETs. A bit cell array unit(220) reads and outputs the bit cell data stored in the intersection of word lines activated in response to X-address signals and bit lines selected by Y-address signals, and has MOSFET for storing bit cell data in each intersection of plural bit lines and plural word lines. A reference cell array unit(230) outputs the precharge voltage stored in the reference line selected by the Y-address signal as a reference signal, and has repeatedly arranged reference lines and discharging lines, and has off-state MOSFET in each intersection of the plural reference lines and the plural grounded gate lines, has off-state MOSFET in each intersection of the plural discharging lines and the plural grounded gate lines.
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