| 摘要 |
A method of forming a thin film transistor array panel is described. The thin film transistor array comprises a substrate, a plurality of scan lines, a plurality of gates a plurality of first bonding pads and a plurality of second bonding pads, wherein the first bonding pads are connected with the scan lines. The first bonding pads and the second bonding pads are formed as a part of the first metal layer. The data lines are extended to electrically connected with the second bonding pads via contact windows. |
