发明名称 Method for manufacturing mask for focus monitoring, and method for manufacturing semiconductor device
摘要 Disclosed is a method for manufacturing a mask for focus monitoring, comprising forming a first opening portion and a second opening portion in a surface region of a transparent substrate, the second opening portion having a pattern shape corresponding to a pattern shape of the first opening portion, and being surrounded by a stack film formed of a halftone film on the transparent substrate and an opaque film on the halftone film, and radiating a charged beam onto a first region which includes an edge of the second opening portion and inside and outside regions which are respectively located inward and outward of the edge of the second opening portion, to etch that part of the transparent substrate which corresponds to the inside region.
申请公布号 US2004265709(A1) 申请公布日期 2004.12.30
申请号 US20040830399 申请日期 2004.04.23
申请人 发明人
分类号 G03F1/08;A61N5/00;G03C5/00;G03F1/00;G03F1/14;G03F1/26;G03F1/32;G03F1/68;G03F7/20;G03F9/00;G21G5/00;H01L21/027;(IPC1-7):G21G5/00 主分类号 G03F1/08
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