发明名称 |
Magnetoresistive effect element and magnetic memory device |
摘要 |
A magnetoresistive effect element may be given satisfactory magnetic characteristics because a deterioration of a magnetoresistive changing rate by annealing can be suppressed and a magnetic memory device includes this magnetoresistive effect element to provide excellent write characteristics. A magnetoresistive effect element has a pair of ferromagnetic layers (magnetization fixed layer 5 and magnetization free layer 7) opposed to each other through an intermediate layer 6 to cause an electric current to flow in the direction perpendicular to the layer surface to obtain a magnetoresistive change. A magnetic memory device comprises the magnetoresistive effect element 1 in which at least one of the pair of ferromagnetic layers 5, 7 contains an amorphous ferromagnetic material whose crystallization temperature is higher than 623 k and bit lines and word lines sandwiching this magnetoresistive effect element and the magnetoresistive effect element in the thickness direction.
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申请公布号 |
US2004262654(A1) |
申请公布日期 |
2004.12.30 |
申请号 |
US20040491324 |
申请日期 |
2004.03.31 |
申请人 |
OHBA KAZUHIRO;KANO HIROSHI;HOSOMI MASANORI;BESSHO KAZUHIRO;YAMAMOTO TETSUYA;MIZUGUCHI TETSUYA |
发明人 |
OHBA KAZUHIRO;KANO HIROSHI;HOSOMI MASANORI;BESSHO KAZUHIRO;YAMAMOTO TETSUYA;MIZUGUCHI TETSUYA |
分类号 |
G01R33/09;G11C11/15;G11C11/16;H01F10/13;H01F10/32;H01L21/8246;H01L27/105;H01L27/22;H01L43/08;H01L43/10;(IPC1-7):H01L31/119 |
主分类号 |
G01R33/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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