| 摘要 |
A method for forming, by thermal oxidation, a silicon oxide layer on an integrated circuit comprising three-dimensional silicon patterns, comprising the steps of: implanting a first element according to a first angle with respect to the horizontal direction, the first element being electrically neutral and having a first effect on the growth rate of a thermal oxide on silicon; implanting a second element according to a second angle with respect to the horizontal direction, the second element being electrically neutral and having a second effect complementary to the first effect on the growth rate of a thermal oxide on silicon, the second angle being distinct from the first angle, and one of the first and second angles being a right angle; and thermally oxidizing the silicon.
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