| 发明名称 |
Polishing method, metallization fabrication method, method for manufacturing semiconductor device and semiconductor device |
| 摘要 |
Described is a polishing technique adapted for multilevel metallization of an electronic circuit device, which comprises polishing a metal film with a polishing liquid containing an oxidizing substance, a phosphoric acid and a protection-layer forming agent. The present invention makes it possible to polishing a metal film at a high removal rate while suppressing occurrence of scratches, delamination, dishing or erosion. |
| 申请公布号 |
US2004266188(A1) |
申请公布日期 |
2004.12.30 |
| 申请号 |
US20040898252 |
申请日期 |
2004.07.26 |
| 申请人 |
RENESAS TECHNOLOGY CORP. |
发明人 |
KONDO SEIICHI;FUJIMORI MASAAKI;SAKUMA NORIYUKI;HOMMA YOSHIO |
| 分类号 |
B24B37/00;B44C1/22;C09G1/04;C09K3/14;C23F1/18;C23F3/06;H01L21/302;H01L21/304;H01L21/3205;H01L21/321;H01L21/461;H01L21/768;H01L23/52;H01L23/532;(IPC1-7):H01L21/302 |
主分类号 |
B24B37/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
