发明名称 Organic field-effect transistor and method of manufacturing same
摘要 An organic field-effect transistor having a simple structure and employing an organic conductor is such that at least a channel is formed by an organic conducting material. For example, the transistor includes a single organic insulating substrate on which an organic conducting layer is formed in such a manner that portions that act as a source, channel and drain are rendered continuous. An insulating layer is formed on the organic conducting layer, with the exception of at least part of the portions thereof that act as the source and drain, so as to cover the portion that acts as the channel. An organic conducting layer that acts as a gate is formed on the insulating layer so as to overlay the portion of the organic conducting layer that acts as the channel.
申请公布号 US2004262601(A1) 申请公布日期 2004.12.30
申请号 US20030638538 申请日期 2003.08.12
申请人 OKUZAKI HIDENORI 发明人 OKUZAKI HIDENORI
分类号 H01L51/05;H01L29/786;H01L51/00;H01L51/30;(IPC1-7):H01L35/24 主分类号 H01L51/05
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