发明名称 Apparatus and system for, and method of supplying process gas in semiconductor device manufacturing equipment
摘要 An apparatus for supplying a process gas onto a wafer includes a plurality of nozzles integrated with an electrode plate of an upper electrode. The nozzles are configured so that the flow rate of the process gas towards the wafer is greater at locations across from the outer peripheral portion of the wafer than from a location across from the center of the wafer. The plurality of nozzles thus can distribute the gas so that the density of the gas is uniform across the entire upper entire upper surface of the wafer.
申请公布号 US2004261711(A1) 申请公布日期 2004.12.30
申请号 US20040813439 申请日期 2004.03.31
申请人 CHOI SUNG-SOK;PARK JIN-JUN 发明人 CHOI SUNG-SOK;PARK JIN-JUN
分类号 C23C16/00;C23C16/44;C23C16/455;C23C16/509;H01L21/02;(IPC1-7):C23C16/00 主分类号 C23C16/00
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