发明名称 |
METHOD FOR MAKING SEMICONDUCTOR DEVICE INCLUDING BAND-ENGINEERED SUPERLATTICE |
摘要 |
A method is for making a semiconductor device by forming a superlattice that, in turn, includes a plurality of stacked groups of layers. The method may also include forming regions for causing transport of charge carriers through the superlattice in a parallel direction relative to the stacked groups of layers. Each group of the superlattice may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and an energy band-modifying layer thereon. The energy-band modifying layer may include at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions so that the superlattice may have a higher charge carrier mobility in the parallel direction than would otherwise occur. The superlattice may also have a common energy band structure therein.
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申请公布号 |
US2004266045(A1) |
申请公布日期 |
2004.12.30 |
申请号 |
US20030647061 |
申请日期 |
2003.08.22 |
申请人 |
RJ MEARS LLC. |
发明人 |
MEARS ROBERT J.;FOOK YIPTONG JEAN AUGUSTIN CHAN SOW;HYTHA MAREK;KREPS SCOTT A.;DUKOVSKI ILIJA |
分类号 |
H01L21/8238;H01L29/10;H01L29/15;H01L29/78;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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