| 摘要 |
A semiconductor integrated circuit according to the present invention, comprising: a buried insulation film formed in a substrate; a first metal layer formed on a top face of the buried insulation film; a vertical transistor having a channel body formed above the first metal layer and in a vertical direction of the substrate; and a gate formed by sandwiching the channel body from both sides in a horizontal direction of the substrate, or surrounding periphery of the channel body.
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